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We demonstrate that quantum well states (QWS) of thin Pb films are highlyperturbed within the proximity of intrinsic film defects. Scanning TunnelingSpectroscopy (STM/STS) measurements indicate that the energy of these stateshave a strong distance dependence within 4 nm of the defect with the strongestenergetic fluctuations equaling up to 100 meV. These localized perturbationsshow large spatially-dependent asymmetries in the LDOS around the defect sitefor each corresponding quantum well state. These energetic fluctuations can bedescribed by a simple model which accounts for fluctuations in the confinementpotential induced by topographic changes.

Visualizing Quantum Well State Perturbations of Metallic Thin Films near Stacking Fault Defects