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Cesium adsorption on 2x4 GaAs (001) was studied by photoemission and lowenergy electron diffraction. The different Cs induced changes of the As 3d andGa 3d core level spectra show that charge transfer is almost complete for Gasurface sites, but is negligible to surface As at a coverage smaller than 0.3ML. The situation is opposite for a coverage larger than 0.3ML, at whichtransfer occurs to As but no longer to Ga. Charge transfer to As atoms leads todisordering and destabilization and induces surface conversion from the As-richsurface to the Ga-rich 4x2 one after annealing at a reduced temperature of 450C.

Cs-induced charge transfer on (2x4)-GaAs(001) studied by photoemission