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This paper presents a study of electron spin dynamics in bulk GaAs at lowtemperatures for elevated optical excitation conditions. Our time-resolvedFaraday rotation measurements yield sub-nanosecond electron spindephasing-times over a wide range of n-doping concentrations in quantitativeagreement with a microscopic treatment of electron spin dynamics. Thecalculation shows the occurrence and breakdown of motional narrowing for spindephasing under elevated excitation conditions. We also find a peak of the spindephasing time around a doping density for which, under lower excitationconditions, a metal-insulator transition occurs. However, the experimentalresults for high excitation can be explained without a metal-insulatortransition. We therefore attribute the peak in spin-dephasing times to theinfluence of screening and scattering on the spin-dynamics of the excitedelectrons.

Ultrafast Spin Dynamics in Optically Excited Bulk GaAs at Low Temperatures