English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We compare the observed strong saturation of the free carrier absorption inn-type semiconductors at 300 K in the terahertz frequency range whensingle-cycle pulses with intensities up to 150 MW/cm2 are used. In the case ofgermanium, a small increase of the absorption occurs at intermediate THz pulseenergies. The recovery of the free carrier absorption was monitored bytime-resolved THz-pump/THz-probe measurements. At short probe delay times, thefrequency response of germanium cannot be fitted by the Drude model. Weattribute these unique phenomena of Ge to dynamical overpopulation of the highmobility gamma conduction band valley.

Observation of Nonequilibrium Carrier Distribution in Ge, Si and GaAs by Terahertz-pump--Terahertz-probe Measurements