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We report on a detailed analysis of the superconducting properties ofboron-doped silicon films grown along the 001 direction by Gas Immersion LaserDoping. The doping concentration cB has been varied up to approx. 10 at.% byincreasing the number of laser shots to 500. No superconductivity could beobserved down to 40mK for doping level below 2.5 at.%. The critical temperatureTc then increased steeply to reach 0.6K for cB = 8 at%. No hysteresis was foundfor the transitions in magnetic field, which is characteristic of a type IIsuperconductor. The corresponding upper critical field Hc2(0) was on the orderof 1000 G, much smaller than the value previously reported by Bustarret et al.in Nature (London) 444, 465 (2006).

Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers