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Angle-resolved photoemission measurements were performed on Zn-dopedLa2-xSrxCuO4 (LSCO) to investigate the effects of Zn impurities on the lowenergy electronic structure. The Zn-impurity-induced increase in thequasi-particle (QP) width in momentum distribution curves (MDC) isapproximately isotropic on the entire Fermi surface and energy-independent nearthe Fermi level (EF). The increase in the MDC width is consistent with theincrease in the residual resistivity due to the Zn impurities if we assume thecarrier number to be 1-x for x=0.17 and the Zn impurity to be a potentialscatterer close to the unitarity limit. For x=0.03, the residual resistivity isfound to be higher than that expected from the MDC width, and the effects ofantifferomagnetic fluctuations induced around the Zn impurities are discussed.The leading edges of the spectra near (pi,0) for x=0.17 are shifted towardhigher energies relative to EF with Zn substitution, indicating a reduction ofthe superconducting gap.

Zn-impurity effects on quasi-particle scattering in La2-xSrxCuO4 studied by angle-resolved photoemission spectroscopy