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Here we use pristine graphene samples in order to analyze how the Raman peaksintensity, measured at 2.4 eV and 1.96 eV excitation energy, changes with theamount of doping. The use of pristine graphene allows investigating theintensity dependence close to the Dirac point. We show that the G peakintensity is independent on the doping, while the 2D peak intensity stronglydecreases for increasing doping. Analyzing this dependence in the framework ofa fully resonant process, we found that the total electron-phonon scatteringrate is ~40 meV at 2.4 eV.

Doping dependence of the Raman peaks intensity of graphene near the Dirac point