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We present a systematic study of the influence of the encapsulationtemperature on dopant confinement and electrical properties of Ge:P delta-dopedlayers. For increasing growth temperature we observe an enhancement of theelectrical properties accompanied by an increased segregation of thephosphorous donors, resulting in a slight broadening of the delta-layer. Wedemonstrate that a step-flow growth achieved at 530 C provides the bestcompromise between high crystal quality and minimal dopant redistribution, withan electron mobility ~ 128 cm^2/Vs at a carrier density 1.3x10^14 cm-2, and a4.2 K phase coherence length of ~ 180 nm.

Influence of encapsulation temperature on Ge:P delta-doped layers