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We have used magneto-photoluminescence measurements to establish thatInP/GaAs quantum dots have a type-II (staggered) band alignment. The averageexcitonic Bohr radius and the binding energy are estimated to be 15nm and 1.5meV respectively. When compared to bulk InP, the excitonic binding is weakerdue to the repulsive (type-II) potential at the hetero-interface. Themeasurements are extended to over almost six orders of magnitude of laserexcitation powers and to magnetic fields of up to 50 tesla. It is shown thatthe excitation power can be used to tune the average hole occupancy of thequantum dots, and hence the strength of the electron-hole binding. Thediamagnetic shift coefficient is observed to drastically reduce as the quantumdot ensemble makes a gradual transition from a regime where the emission isfrom (hydrogen-like) two-particle excitonic states to a regime where theemission from (helium-like) four-particle biexcitonic states also becomesignificant.

Extended excitons and compact helium-like biexcitons in type-II quantum dots