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rectification is developed for zinc-blende 43m crystal faces of arbitrary indices hkl . The theory is then used to account for our experimental results for terahertz generation from GaAs high-index planes 11N A and 11N B, where N=2, 3, 4, and 5. The data combined with the calculations allow us to demonstrate that a surface field is present on both the Ga-rich and As-rich faces and to determine that the signs are opposite and that the strengths are similar. Such conclusions are inaccessible by work restricted to low-index planes.

Generation of terahertz radiation by bulk and surface optical rectification from crystal planes of arbitrary orientation