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The electronic structure of H/Ge(111)1×1 was investigated using angle-resolved photoelectron spectroscopy. Spectra were measured along the high-symmetry lines of the 1×1 surface Brillouin zone. In the Γ̅ −K̅ −M̅ direction, two surface states, labeled a and a′, were found in the lower and upper band-gap pockets. The a and a′ surface states are associated with the Ge-H bonds and the Ge-Ge backbonds, respectively. In the Γ̅ −M̅ direction, only the Ge-H surface state, a, can be identified. It is found in the band-gap pocket around the M̅ point. The two hydrogen-induced surface states on H/Ge(111)1×1 show strong similarities with the corresponding surface states on H/Si(111)1×1. Results from H/Ge(111)1×1 and H/Si(111)1×1 are compared in this Brief Report

physical review b

Electronic structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mtext>H</mml:mtext><mml:mo>/</mml:mo><mml:mtext>Ge</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>111</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:mn>1</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn></mml:mrow></mml:math>studied by angle-resolved photoelectron spectroscopy

Electronic structure ofH/Ge(111)1×1studied by angle-resolved photoelectron spectroscopy