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Raman spectroscopy is a fast, non-destructive means to characterize graphenesamples. In particular, the Raman spectra show a significant dependence ondoping. While the change in position and width of the G peak can be explainedby the non-adiabatic Kohn anomaly at $\Gamma$, the significant dopingdependence of the 2D peak intensity has not been explained yet. Here we showthat this is due to a combination of electron-phonon and electron-electronscattering. Under full resonance, the photogenerated electron-hole pairs canscatter not just with phonons, but also with doping-induced electrons or holes,and this changes the intensity. We explain the doping dependence and show howit can be used to determine the corresponding electron-phonon coupling. This ishigher than predicted by density-functional theory, as a consequence ofrenormalization by Coulomb interactions.

Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene