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Low-field magnetotransport measurements on a high mobility (mu=110,000cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surfacereveal a sixfold valley degeneracy with a valley splitting <= 0.1 K. Thezero-field resistivity rho_{xx} displays strong temperature dependence for 0.07< T < 25 K as predicted for a system with high degeneracy and large mass. Wepresent a method for using the low-field Hall coefficient to probe intervalleymomentum transfer (valley drag). The relaxation rate is consistent with Fermiliquid theory, but a small residual drag as T->0 remains unexplained.

Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface