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We present second-order photon correlation measurements on single InP/(Ga,In)P quantum dots as a function of temperature. Low background emission allows to obtain antibunching minima g(2)(0) below 0.25 up to 45 K. The antibunching time R increases or decreases with temperature depending on the quantum-dot size. The two trends result from a competition between hole thermal excitation and dark-to-bright exciton transitions. The former prevails in smaller dots showing increasing R with temperature, while the latter dominates in larger quantum dots showing decreasing R with temperature.This work has been supported by research contracts of the Spanish Ministry of Education (Grant No. MAT2008-01555/NAN), Consolider CSD (Grant No. 2006–19), the Community of Madrid (Grant No. CAMS-0505-ESP-0200), and the Spanish Ministry of Science and Innovation (Grant No.Nanoinpho-QD TEC2008-06756-C03-01).Peer reviewe

Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters