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Motivated by quantum chemistry calculations, showing that molecularadsorption in graphene takes place on preferential sites of the honeycomblattice, we study the effect of an isolated impurity on the local electronicproperties of a graphene monolayer, when the impurity is located on asite-like, bond-like, or hollow-like position. We evaluate the local density ofstates (LDOS) as a function of energy on the impurity and on its neighboringsites, as well as in reciprocal space, at an energy corresponding to a boundstate, in the three cases of interest. The latter study may be relevant tointerpret the results of Fourier transformed scanning tunneling spectroscopy,as they show which states mostly contribute to impurity-induced variations ofthe LDOS. We also estimate, semi-analytically, the dependence of the conditionfor having a low-energy bound state on the impurity potential strength andwidth. Such results are then exploited to obtain the quasiparticle lifetime andthe static conductivity in graphene in the dilute impurity limit. Inparticular, we recover a sublinear dependence of the conductivity on thecarrier concentration as a generic impurity effect.

Effect of impurities in high-symmetry lattice positions on the local density of states and conductivity of graphene