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We have succeeded in preparing high-quality Gd-doped single-crystalline EuOfilms. Using Eu-distillation-assisted molecular beam epitaxy and a systematicvariation in the Gd and oxygen deposition rates, we have been able to observesustained layer-by-layer epitaxial growth on yttria-stabilized cubic zirconia(001). The presence of Gd helps to stabilize the layer-by-layer growth mode. Weused soft x-ray absorption spectroscopy at the Eu and Gd M4,5 edges to confirmthe absence of Eu3+ contaminants and to determine the actual Gd concentration.The distillation process ensures the absence of oxygen vacancies in the films.  From magnetization measurements we found the Curie temperature to increasesmoothly as a function of doping from 70 K up to a maximum of 125 K. Athreshold behavior was not observed for concentrations as low as 0.2%.

Epitaxy, stoichiometry, and magnetic properties of Gd-doped EuO films on YSZ (001)