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The contribution of the fundamental gap E_ as well as those of the E_ +Delta(so) and E+ transitions to the dielectric function of GaAs1-xNx alloysnear the band edge were determined from variable-angle spectroscopicellipsometry and modulated photoreflectance spectroscopy analyses. Theoscillator strength of the E_ optical transition increases weakly with nitrogenincorporation. The two experimental techniques independently reveal that notonly the oscillator strength of the E+ transition but also that of E_ +Delta(so) become larger compared to that of the fundamental gap as the Ncontent increases. Since the same conduction band is involved in both the E_transition and its split-off replica, these results reveal that adding nitrogenin GaAs1-xNx alloys affects not only the conduction but also the valence bands.

physical review. b, condensed matter and materials physics

Evidence of valence band perturbations in GaAsN/GaAs(001): A combined  variable-angle spectroscopic ellipsometry and modulated photoreflectance  investigation