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Electron spin dynamics in InAs/GaAs heterostructures consisting of a singlelayer of InAs (1/3$\sim$1 monolayer) embeded in (001) and (311)A GaAs matrixwas studied by means of time-resolved Kerr rotation spectroscopy. The spinrelaxation time of the sub-monolayer InAs samples is significantly enhanced,compared with that of the monolayer InAs sample. We attributed the slowing ofthe spin relaxation to dimensionally constrainedD\textquoteright{}yakonov-Perel\textquoteright{} mechanism in the motionalnarrowing regime. The electron spin relaxation time and the effective g-factorin sub-monolayer samples were found to be strongly dependent on thephoton-generated carrier density. The contribution from bothD\textquoteright{}yakonov-Perel\textquoteright{} mechanism and Bir-Aronov-Pikusmechanism were discussed to interpret the temperature dependence of spindecoherence at various carrier densities.

Spin relaxation in sub-monolayer and monolayer InAs structures grown in GaAs matrix