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We have performed angle-resolved photoemission spectroscopy measurements and first-principles electronic-structure calculations on the electron-doped high-${T}_{c}$ superconductors (HTSCs) $L{n}_{1.85}{\text{Ce}}_{0.15}{\text{CuO}}_{4}$ ($Ln=\text{Nd}$, Sm, and Eu). The observed Fermi surface and band dispersion show such changes that with decreasing ionic size of $L{n}^{3+}$ (increasing chemical pressure), the curvature of the Fermi surface or $\ensuremath{-}{t}^{\ensuremath{'}}/t$ decreases, where $t$ and ${t}^{\ensuremath{'}}$ are transfer integrals between the nearest-neighbor and next-nearest-neighbor Cu sites, respectively, explaining the apparently inconsistent behavior seen in the hole-doped HTSC ${\text{La}}_{2\ensuremath{-}x}{\text{Sr}}_{x}{\text{CuO}}_{4}$ under epitaxial strain. Around the node, the antiferromagnetic gap is opened with increasing chemical pressure. We propose that the nodal gap opening is possibly due to the decrease in $\ensuremath{-}{t}^{\ensuremath{'}}/t$ through the improved nesting, leading to the decrease in ${T}_{c}$.

physical review. b, condensed matter and materials physics

Effects of chemical pressure on the Fermi surface and band dispersion of the electron-doped high-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>T</mml:mi><mml:mi>c</mml:mi></mml:msub></mml:mrow></mml:math>superconductors

Effects of chemical pressure on the Fermi surface and band dispersion of the electron-doped high-Tcsuperconductors