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We study magnetotransport in a high mobility Si two-dimensional electronsystem by in situ tilting of the sample relative to the magnetic field. Apronounced dip in the longitudinal resistivity is observed during the Landaulevel crossing process for noninteger filling factors. Together with a Hallresistivity change which exhibits the particle-hole symmetry, this indicatesthat electrons or holes in the relevant Landau levels become localized at thecoincidence where the pseudospin-unpolarized state is expected to be stable.

Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well