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The interaction mechanism between transverse domain walls (TDWs) in Permalloy nanowires and artificially patterned traps is studied using high-sensitivity spatially resolved magneto-optical Kerr effect measurements and numerical simulations. T-shaped trap geometries are considered, where a DW traveling in the horizontal arm is pinned by the vertical arm. Pinning strengths as well as potential energy modifications created by the traps are measured, and the roles of the different DW characteristic parameters, such as the DW core orientation and the magnetic charge distribution within the DW, are presented. It is found that whether or not the core of the DW is aligned with the transverse arm of the T structure affects the shape of the main potential experienced by the DW, whereas the pinning strength strongly depends on which side of the V-shaped TDW interacts with the trap. The role of the magnetostatic interaction between the charge of the DW and the charge present at the junction is discussed.

Mechanism for domain wall pinning and potential landscape modification by artificially patterned traps in ferromagnetic nanowires