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We present the results of a modeling study of the three-dimensional current density in single-carrier sandwich-type devices of disordered organic semiconductors. The calculations are based on a master-equation approach, assuming a Gaussian distribution of site energies without spatial correlations. The injection-barrier lowering due to the image potential is taken into account, so that the model provides a comprehensive treatment of the space-charge-limited current as well as the injection-limited current (ILC) regimes. We show that the current distribution can be highly filamentary for voltages, layer thicknesses, and disorder strengths that are realistic for organic light-emitting diodes and, that, as a result, the current density in both regimes can be significantly larger than as obtained from a one-dimensional continuum drift-diffusion device model. For devices with large injection barriers and strong disorder, in the ILC transport regime, good agreement is obtained with the average current density predicted from a model assuming injection and transport via one-dimensional filaments.

physical review. b, condensed matter and materials physics

Publisher's Note: Modeling and analysis of the three-dimensional current density in sandwich-type single-carrier devices of disordered organic semiconductors [Phys. Rev. B<b>79</b>, 085203 (2009)]

Publisher's Note: Modeling and analysis of the three-dimensional current density in sandwich-type single-carrier devices of disordered organic semiconductors [Phys. Rev. B79, 085203 (2009)]