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We find that the polarization field, B_chi, obtained by scaling theweak-parallel-field magnetoresistance at different electron densities in adilute two-dimensional electron system in (111) silicon, corresponds to thespin susceptibility that grows strongly at low densities. The polarizationfield, B_sat, determined by resistance saturation, turns out to deviate tolower values than B_chi with increasing electron density, which can beexplained by filling of the upper electron subbands in the fully spin-polarizedregime.

Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon