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Whereas bulk bismuth supports very-high mobility, light, Dirac electrons andholes in its interior, its boundaries support a layer of heavy electrons insurface states formed by spin orbit interaction in the presence of the surfaceelectric field. Small diameter d trigonal Bi nanowires (30 nm < d < 200 nm)were studied via magnetotransport at low temperatures and for fields up to 14 Tin order to investigate the role of surfaces in electronic transport. Atwo-dimensional behavior was expected for surface charges; however we foundinstead a three-dimensional behavior, with a rich spectrum of Landau levels ina nearly spherical Fermi surface. This is associated with the long penetrationlength of surface states of trigonal wires. The prospect of the participationof surface transport and surface-induced relaxation of bulk carriers in theelectronic properties of macroscopic samples is evaluated. We show that recentobservations of magnetoquantum peaks in the Nernst thermopower coefficient,attributed to two-dimensional electron gas charge fractionalization, can bemore plausibly interpreted in terms of these surface states.

Observation of three-dimensional behavior in surface states of bismuth nanowires and the evidence for bulk Bi charge fractionalization