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X-ray absorption fine-structure (XAFS) measurements supported by {\em abinitio} computations within the density functional theory (DFT) are employed tosystematically characterize Fe-doped as well as Fe and Si-co-doped films grownby metalorganic vapour phase epitaxy. The analysis of extended-XAFS data showsthat depending on the growth conditions, Fe atoms either occupy Gasubstitutional sites in GaN or precipitate in the form of $\epsilon$-Fe$_3$Nnanocrystals, which are ferromagnetic and metallic according to the DFTresults. Precipitation can be hampered by reducing the Fe content, or byincreasing the growth rate or by co-doping with Si. The near-edge region of theXAFS spectra provides information on the Fe charge state and shows its partialreduction from Fe$^{+3}$ to Fe$^{+2}$ upon Si co-doping, in agreement with theFe electronic configurations expected within various implementations of DFT.

Local structure of (Ga,Fe)N and (Ga,Fe)N:Si investigated by x-ray absorption fine structure spectroscopy