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We present a systematic study on the influence of epitaxial strain and holeconcentration on the magnetic anisotropy in (Ga,Mn)As at 4.2 K. The strain wasgradually varied over a wide range from tensile to compressive by growing aseries of (Ga,Mn)As layers with 5% Mn on relaxed graded (In,Ga)As/GaAstemplates with different In concentration. The hole density, the Curietemperature, and the relaxed lattice constant of the as-grown and annealed(Ga,Mn)As layers turned out to be essentially unaffected by the strain.Angle-dependent magnetotransport measurements performed at different magneticfield strengths were used to probe the magnetic anisotropy. The measurementsreveal a pronounced linear dependence of the uniaxial out-of-plane anisotropyon both strain and hole density. Whereas the uniaxial and cubic in-planeanisotropies are nearly constant, the cubic out-of-plane anisotropy changessign when the magnetic easy axis flips from in-plane to out-of-plane. Theexperimental results for the magnetic anisotropy are quantitatively comparedwith calculations of the free energy based on a mean-field Zener model. Analmost perfect agreement between experiment and theory is found for theuniaxial out-of-plane and cubic in-plane anisotropy parameters of the as-grownsamples. In addition, magnetostriction constants are derived from theanisotropy data.

Magnetic anisotropy in (Ga,Mn)As: Influence of epitaxial strain and hole concentration