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A detailed study of the evolution of the magnetoresistance was performed onelectrodeposited Co/Cu multilayers with Cu layer thicknesses ranging from 0.5nm to 4.5 nm. For thin Cu layers (up to 1.5 nm), anisotropic magnetoresistance(AMR) was observed whereas multilayers with thicker Cu layers exhibited cleargiant magnetoresistance (GMR) behaviour. The GMR magnitude increased up toabout 3.5 to 4 nm Cu layer thickness and slightly decreased afterwards.According to magnetic measurements, all samples exhibited ferromagnetic (FM)behaviour. The relative remanence turned out to be about 0.75 for both AMR andGMR type multilayers. This clearly indicates the absence of anantiferromagnetic (AF) coupling between adjacent magnetic layers for Cu layerseven above 1.5 nm where the GMR effect occurs. The AMR behaviour at low spacerthicknesses indicates the presence of strong FM coupling (due to, e.g.,pin-holes in the spacer and/or areas of the Cu layer where the layer thicknessis very small). With increasing spacer thickness, the pin-hole density reducesand/or the layer thickness uniformity improves which both lead to a weakeningof the FM coupling. This improvement in multilayer structure quality results ina better separation of magnetic layers and the weaker coupling (or completeabsence of interlayer coupling) enables a more random magnetization orientationof adjacent layers, all this leading to an increase of the GMR. Coercive fieldand zero-field resistivity measurements as well as the results of a structuralstudy reported earlier on the same multilayers provide independent evidence forthe microstructural features established here. The large GMR reportedpreviously on such Co/Cu multilayers at Cu layer thicknesses around 1 nm can beattributed to the presence of a fairly large superparamagnetic (SPM) fractionrather than being due to a strong AF coupling.

Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour