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Growth of atomic indium chains - 1D islands - on the Si(100)-2x1 surface wasobserved by scanning tunneling microscopy (STM) at room temperature andsimulated by means of a kinetic Monte Carlo method. Density of indium islandsand island size distribution were obtained for various deposition rates andcoverage. STM observation of growth during deposition of indium providedinformation on growth kinetics and relaxation of grown layers. Important roleof C-type defects at adsorption of metal atoms was observed. Measured growthcharacteristics were simulated using a microscopic model with anisotropicsurface diffusion and forbidden zones along the metal chains. An analysis ofexperimental and simulation data shows that detachment of indium adatoms fromthe chains substantially influences a growth scenario and results inmonotonously decreasing chain length distribution function at low coverage.Diffusion barriers determined from the simulations correspond to almostisotropic diffusion of indium adatoms on the surface. The results are discussedwith respect to data reported in earlier papers for other metals.

Heterogeneous nucleation and adatom detachment at 1-D growth of Indium on Si(100)-2x1