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Electrical injection and detection of spin-polarized electrons isdemonstrated for the first time in a single wafer, all-semiconductor,GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAsferromagnetic Esaki diodes as spin aligning contacts. The conversion ofspin-polarized holes into spin-polarized electrons via Esaki tunnelling leavesits mark in a bias dependence of the spin-injection efficiency, which atmaximum reaches the relatively high value of 50%.

Electrical spin injection and detection in lateral all-semiconductor devices