English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

We present photoluminescence measurements under intense magnetic fields (B up to 30 T) in n-doped indium nitride samples with carrier concentration ranging from about 7.5x10(17) cm(-3) to 5x10(18) cm(-3). The observation of transitions involving several Landau levels permits to determine the carrier-reduced mass mu around the Gamma point. Depending on the carrier concentration, we find mu ranging between 0.093m(0) and 0.107m(0) (m(0) is the electron mass in vacuum). This finding poses a lower limit to the electron effective mass, whose unexpectedly large value (m(e)>= 0.093m(0)) indicates that the sources of n doping in InN perturb strongly the crystal conduction band near its minimum

Carrier mass measurements in degenerate indium nitride