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Electron-hole generation and recombination rates for intravalley andintervalley phonon scattering in Graphene are presented. The transverse and thelongitudinal optical phonon modes ($E_{2g}$-modes) near the zone center($\Gamma$-point) contribute to intravalley interband carrier scattering. At thezone edge ($K(K')$-point), only the transverse optical phonon mode($A'_{1}$-mode) contributes significantly to intervalley interband scatteringwith recombination rates faster than those due to zone center phonons. Thecalculated recombination times range from less than a picosecond to more thanhundreds of picoseconds and are strong functions of temperature and electronand hole densities. The theoretical calculations agree well with experimentalmeasurements of the recombination rates of photoexcited carriers in graphene.

Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene