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We study the effect of electron-electron interaction on the one-particledensity of states (\emph{DOS}) $\rho^{(d)}(\epsilon,T)$ of low-dimensionaldisordered metals near Fermi energy within the framework of the finitetemperature conventional impurity diagram technique. We consider only diffusivelimit and by a geometric re-summation of the most singular first orderself-energy corrections via the Dyson equation we obtain a non-divergentsolution for the \emph{DOS} at low energies, while for higher energies thewell-known Altshuler-Aronov corrections are recovered. At the Fermi level$\rho^{(d)}(\epsilon,T=0)\to 0$, this indicates that interacting disorderedtwo- and quasi-one-dimensional systems are in insulating state at zerotemperature. The obtained results are in good agreement with recent tunnelingexperiments on two-dimensional GaAs/AlGaAs heterostructures andquasi-one-dimensional doped multiwall carbon nanotubes.

Critical behavior of density of states near Fermi energy in low-dimensional disordered metals