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We report systematic quantum Hall transport experiments on Fabry-Perotelectron interferometers at ultra-low-temperatures. The GaAs/AlGaAsheterostructure devices consist of two constrictions defined by etch trenchesin 2D electron layer, enclosing an approximately circular island. Front gatesdeposited in etch trenches allow to fine-tune the device for symmetry and tochange the constriction filling, relative to the bulk. The low-fieldlongitudinal and Hall magnetotransport shows Shubnikov-de Haas oscillations andinteger quantum Hall plateaus. A systematic variation of front-gate voltageaffects the constriction and the island electron density, while the bulkdensity remains unaffected. This results in quantized plateaus in longitudinalresistance, while the Hall resistance is dominated by the low-density,low-filling constriction. At lower fields, when the quantum Hall plateaus failto develop, we observe bulk Shubnikov-de Haas oscillations in seriescorresponding to an integer filling of the magnetoelectric subbands in theconstrictions. This indicates that the whole interferometer region is stillquantum-coherent at these lower fields at 10 mK. Analyzing the data within aFock-Darwin model, we obtain the constriction electron density as a function ofthe front gate bias and, extrapolating to the zero field, the number ofelectric subbands (conductance channels) resulting from the electronconfinement in the constrictions.

Low-field quantum Hall transport in an electron Fabry-Perot interferometer: Determination of constriction filling vs front-gate voltage