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We report the effect of dilute alloying of the anion sublattice with S on thein-plane uniaxial magnetic anisotropy and magnetization reversal process inGa1-xMnxP as measured by both ferromagnetic resonance (FMR) and superconductingquantum interference device (SQUID) magnetometry. At T=5K, raising the Sconcentration increases the uniaxial magnetic anisotropy between in-plane <011>directions while decreasing the magnitude of the (negative) cubic anisotropyfield. Simulation of the SQUID magnetometry indicates that the energy requiredfor the nucleation and growth of domain walls decreases with increasing y.These combined effects have a marked influence on the shape of thefield-dependent magnetization curves; while the direction remains the easy axisin the plane of the film, the field dependence of the magnetization developsdouble hysteresis loops in the [011] direction as the S concentration increasessimilar to those observed for perpendicular magnetization reversal in lightlydoped Ga1-xMnxAs. The incidence of double hysteresis loops is explained with asimple model whereby magnetization reversal occurs by a combination of coherentspin rotation and noncoherent spin switching, which is consistent with both FMRand magnetometry experiments. The evolution of magnetic properties with Sconcentration is attributed to compensation of Mn acceptors by S donors, whichresults in a lowering of the concentration of holes that mediateferromagnetism.

Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy