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Obliquely deposited amorphous Ge_xSe{1-x} thin-films at several compositionsin the 0.15 < x < 0.333 range, and at several obliqueness angles in the 0 <alpha < 80 range at each x were evaporated on Si and glass substrates. Herealpha designates the angle between film normal and direction of vaportransport. Raman scattering, ir reflectance and optical absorption measurementswere undertaken to characterize the vibrational density of states and opticalband gaps. Edge views of films in SEM confirm the columnar structure ofobliquely (alpha = 80) deposited films. Films, mounted in a cold stage flushedwith N2 gas, were irradiated to UV radiation from a Hg-Xe arc lamp, and

Origin of giant photocontraction in obliquely deposited amorphous Ge_xSe_{1-x} thin- films and the intermediate phase