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We have measured the conductivity of high-mobility (001) Simetal-oxide-semiconductor field effect transistors (MOSFETs) over wide rangesof electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, andin-plane magnetic fields B=0-5T. The experimental data have been analyzed usingthe theory of interaction effects in the conductivity of disordered 2D systems.The parameters essential for comparison with the theory, such as theintervalley scattering time and valley splitting, have been measured orevaluated in independent experiments. The observed behavior of theconductivity, including its quasi-linear increase with decreasing T down to~0.4K and its downturn at lower temperatures, is in agreement with the theory.The values of the Fermi- liquid parameter obtained from the comparison agreewith the corresponding values extracted from the analysis of Shubnikov-de Haasoscillations based on the theory of magnetooscillations in interacting 2Dsystems.

Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers