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We report a large, quasi-reversible tunnel magnetoresistance inexchange-biased ferromagnetic semiconductor tunnel junctions wherein a softferromagnetic semiconductor (\gma) is exchange coupled to a hard ferromagneticmetal (MnAs). Our observations are consistent with the formation of a region ofinhomogeneous magnetization (an "exchange spring") within the biased \gmalayer. The distinctive tunneling anisotropic magnetoresistance of \gma producesa pronounced sensitivity of the magnetoresistance to the state of the exchangespring.

Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions