English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Si(001)-(2$\times$1) surface is one of the many two-dimensional systems ofscientific and applied interest. It has two surface state bands (1)anti-bonding pi* band, which has acceptor states and (2) bonding pi band, whichhas donor states. Due to its asymmetric dimer reconstruction, transport throughthis surface can be considered in two distinct directions, i.e. along andperpendicular to the paired dimer rows. We calculate the zero bias conductanceof these surface states under flat-band condition and find that conductionalong the dimer row direction is significant due to strong orbitalhybridization. We also find that the surface conductance is orders of magnitudehigher than the bulk conductance close to the band edges for the unpassivatedsurface at room temperature. Therefore, we propose that the transport throughthese surface states may be the dominant conduction mechanisms in the recentlyreported scanning tunneling microscopy of silicon nanomembranes. We alsocalculate the zero bias conductance under flat-band condition for the weaklyinteracting dangling bond wires along and perpendicular to the dimer rowdirection and find similar trends. Extended Huckel theory is used for theelectronic structure calculations, which is benchmarked with the GWapproximation for Si and has been successfully applied to Si systems in past.

Electrical transport in two dimensional electron and hole gas on Si(001)-(2x1) surface