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We report on measurements of low frequency noise in a single electrontransistor from a few Hz up to 10 MHz. Measurements were done for differentbias and gate voltages, which allows us to separate noise contributions fromdifferent noise sources. We find a 1/f noise spectrum with two Lorentzianssuperimposed. The cut-off frequency of one of the Lorentzians variessystematically with the potential of the SET island. Our data is consistentwith two single-charge fluctuators situated close to the tunnel barrier. Wesuggest that these are due to random charging of aluminum grains, each actingas a single electron box with tunnel coupling to one of the leads andcapacitively coupled to the SET island. We are able to fit the data to ourmodel and extract parameters for the fluctuators.

Is charge noise in single electron transistors and charge qubits caused by metallic grains?