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We study nonequilibrium carriers (electrons and holes) in an intrinsicgraphene at low temperatures under far- and mid-infrared (IR) radiation in awide range of its intensities. The energy distributions of carriers arecalculated using a quasiclassic kinetic equation which accounts for the energyrelaxation due to acoustic phonons and the radiative generation-recombinationprocesses associated with thermal radiation and the carrier photoexcitation byincident radiation. It is found that the nonequilibrium distributions aredetermined by an interplay between weak energy relaxation on acoustic phononsand generation-recombination processes as well as by the effect of pumpingsaturation. Due to the effect of saturation, the carrier distribution functionscan exhibit plateaus around the pumping region at elevated intensities. Asshown, at sufficiently strong mid-IR pumping, the population inversion canoccur below the pumping energy. The graphene dc conductivity as a function ofthe pumping intensity exhibits a pronounced nonlinearity with a sub-linearregion at fairly low intensities and a saturation at a strong pumping. However,an increase in the pumping intensity in very wide range leads only to a modestincrease in the carrier concentration and, particularly, the dc conductivity.The graphene conductivity at mid-IR irradiation exhibit strong sensitivity tomechanisms of carrier momentum relaxation.

Nonequilibrium carriers in an intrinsic graphene under interband photoexcitation