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Recent fabrication of atomic precision nanodevices for spintronics greatlyboosted their performance and also revealed new interesting features, asoscillating magnetoresistance with number of atomic layers in a multilayeredstructure. This motivates the need to go beyond the usual theoretical approachof semi-classical continuous layers. Here the simple tight-binding dynamics isused to describe quantum conduction in a multicomponent system withspin-polarized electrodes separated by an ultrathin and atomically coherentnon-magnetic spacer (either metallic or insulating). A possibility is indicatedfor obtaining a huge resonant enhancement of magnetoresistance in such deviceby a special choice of gate voltage on the spacer element.

Quantum effects for ballistic transport in spintronic devices