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In order to provide an accurate theoretical description of current densityvoltage (J-V) characteristics of an organic heterojunction device over a widerange of electric fields at various temperatures, it is proposed that anaccumulation of charge carriers at the heterojunction will lead to a reductionin the barrier height across the heterojunction. Two well-known holetransporting materials, 4,4,4-Tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (MTDATA) andN,N-diphenyl-N,N-bis(1-naphthyl)(1,1-biphenyl)-4,4diamine (NPB) were used tofabricate unipolar heterojunction devices. It is found that the J-Vcharacteristics depends strongly on applied bias. The simulated J-Vcharacteristics of the heterojunction device, with the modified injectionmodel, are found to be in excellent agreement with the experimental data.

Charge carrier induced barrier height reduction at organic heterojunctions