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We consider transport in the insulating regime of GaMnAs. We calculate theresistance, magnetoresitance and Hall effect, assuming that the Fermi energy isin the region of localized states above the valence band mobility edge. Bothhopping and activated band transport contributions are included. The anomalousHall current from band states is very different from the hopping Hall currentand has extrinsic (skew) and intrinsic (Luttinger) contributions. Comparisonwith experiment allows us to assess the degree to which band and hoppingcontribution determine each of the three transport coefficients in a particulartemperature range. There are strong indications that the insulating statetransport in GaMnAs is controlled primarily by extended state, band edge,transport rather than by variable range hopping, as reported in the literature.

Magnetotransport in the insulating regime of Mn doped GaAs