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The temperature ($T$) dependent metal-insulator transition (MIT) in VO$_2$ isinvestigated using bulk sensitive hard x-ray ($\sim$ 8 keV) valence band, corelevel, and V 2$p-3d$ resonant photoemission spectroscopy (PES). The valenceband and core level spectra are compared with full-multiplet cluster modelcalculations including a coherent screening channel. Across the MIT, V 3$d$spectral weight transfer from the coherent ($d^1\underbar{\it {C}}$ final)states at Fermi level to the incoherent ($d^{0}+d^1\underbar{\it {L}}$ final)states, corresponding to the lower Hubbard band, lead to gap-formation. Thespectral shape changes in V 1$s$ and V 2$p$ core levels as well as the valenceband are nicely reproduced from a cluster model calculations, providingelectronic structure parameters. Resonant-PES finds that the$d^1\underbar{\it{L}}$ states resonate across the V 2$p-3d$ threshold inaddition to the $d^{0}$ and $d^1\underbar{\it {C}}$ states. The results supporta Mott-Hubbard transition picture for the first order MIT in VO$_2$.Comment: 6 pages, 3 figures. to be published in Phys. Rev.

physical review. b, condensed matter and materials physics

Photoemission evidence for a Mott-Hubbard metal-insulator transition in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>VO</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>

Photoemission evidence for a Mott-Hubbard metal-insulator transition inVO2