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We present a high-resolution photoluminescence study of Er-doped SiO2sensitized with Si nanocrystals (Si NCs). Emission bands originating fromrecombination of excitons confined in Si NCs and of internal transitions withinthe 4f-electron core of Er3+ ions, and a band centered at lambda = 1200nm havebeen identified. Their kinetics have been investigated in detail. Based onthese measurements, we present a comprehensive model for energy transfermechanisms responsible for light generation in this system. A unique picture ofenergy flow between subsystems of Er3+ and Si NCs is developed, yielding trulymicroscopic information on the sensitization effect and its limitations. Inparticular, we show that most of the Er3+ ions available in the system areparticipating in the energy exchange. The long standing problem of apparentloss of optical activity of majority of Er dopants upon sensitization with SiNCs is clarified and assigned to appearance of a very efficient energy exchangemechanism between Si NCs and Er3+ ions. Application potential of SiO2:Ersensitized by Si NCs is discussed in view of the newly acquired microscopicinsight.

Energy transfer processes in Er-doped SiO2 sensitized with Si nanocrystals