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Considering scattering by unintentional background charged impurities and bycharged dopants in the modulation doping layer as well as by GaAs acousticphonons, we theoretically consider the practical intrinsic (phonons) andextrinsic (background and dopants) limits to carrier mobility in modulationdoped AlGaAs-GaAs 2D semiconductor structures. We find that reducing backgroundimpurity density to $10^{12}$ cm$^{-3}$ along with a modulation dopingseparation of 1000 \AA or above will achieve a mobility of $100 \times 10^6$cm$^2$/Vs at a carrier density of $3\times 10^{11}$ cm$^{-2}$ for T=1K. At T=4(10)K, however, the hard limit to the 2D mobility would be set by acousticphonon scattering with the maximum intrinsic mobility being no higher than 22$(5) \times 10^6$ cm$^2$/Vs. Detailed numerical results are presented as afunction of carrier density, modulation doping distance, and temperature toprovide a quantitative guide to experimental efforts for achieving ultra-high2D mobilities.

Limit to 2D mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 millions