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We demonstrate the spin valve effect by ballistic transport in fullyepitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granularhybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAsnanoparticles in a GaAs matrix, and acts as a spin injector and a spindetector. Although the barrier height of the GaAs/MnAs interface was found tobe very small, relatively large magnetoresistance was observed. This resultshows that by using ballistic transport, we can realize a large spin valveeffect without inserting a high tunnel barrier at the ferromagnetic metal /semiconductor interface.

Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures