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We observed a strong modulation in the current-voltage characteristics ofSrRuO$_3$/Nb:SrTiO$_3$ Schottky junctions by Mn substitution in SrRuO$_3$,which induces a metal-insulator transition in bulk. The temperature dependenceof the junction ideality factor indicates an increased spatial inhomogeneity ofthe interface potential with substitution. Furthermore, negative differentialresistance was observed at low temperatures, indicating the formation of aresonant state by Mn substitution. By spatially varying the position of the Mndopants across the interface with single unit cell control, we can isolate theorigin of this resonant state to the interface SrRuO$_3$ layer. These resultsdemonstrate a conceptually different approach to controlling interface statesby utilizing the highly sensitive response of conducting perovskites toimpurities.

Negative Differential Resistance Induced by Mn Substitution at SrRuO3/Nb:SrTiO3 Schottky Interfaces