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We have developed a technique utilizing a double quantum well heterostructurethat allows us to study the effect of a nearby ground-plane on the metallicbehavior in a GaAs two-dimensional hole system (2DHS) in a single sample andmeasurement cool-down, thereby maintaining a constant disorder potential. Incontrast to recent measurements of the effect of ground-plane screening of thelong-range Coulomb interaction in the insulating regime, we find surprisinglylittle effect on the metallic behavior when we change the distance between the2DHS and the nearby ground-plane.

The effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems