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We measured the conductance fluctuation of bi- and trilayer graphene devicesprepared on mechanical exfoliated graphene by an all-dry, lithography-freeprocess using an ultrathin quartz filament as a shadow mask. Reproduciblefluctuations in conductance as a function of applied gate voltage or magneticfield were found. As the gate voltage was tuned so that the graphene device waspushed to the charge neutral point, the amplitude of the conductancefluctuation was found to be suppressed quickly from a value consistent withuniversal conductance fluctuation when the devices were still well withinweakly disordered regime. The possible physical origins of the suppression arediscussed.

Suppression of conductance fluctuation in weakly disordered mesoscopic graphene samples near the charge neutral point